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| Advance Product Information November 2, 2004 Q-Band Driver Amplifier Key Features * * * * * * * * TGA4042-EPU Typical Frequency Range: 41 - 45 GHz 18 dBm Nominal P1dB 14 dB Nominal Gain 17 dB Nominal Return Loss On-Chip Power Detector Bias 6 V, 168 mA 0.25 um 2MI pHEMT Technology Chip Dimensions 3.20 x 2.18 x 0.1 mm (0.126 x 0.086 x 0.004) in Preliminary Measured Data Bias Conditions: Vd = 6 V, Id = 168 mA 25 Small Signal Gain (dB) 15 5 -5 -15 -25 -35 40 41 42 43 44 45 46 47 Frequency (GHz) Primary Applications * * Point-to-Point Radio Military Radar Systems Q Band Sat-Com GAIN * ORL IRL 20 19 P1dB (dBm) 18 17 16 15 42 42.2 42.4 42.6 42.8 43 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 1 Advance Product Information November 2, 2004 TGA4042-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL Vd Vg Id Ig PIN PD TCH TM T STG 1/ 2/ 3/ 4/ Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature PARAMETER VALUE 8V -5 TO 0 V 294 mA 14 mA 21 dBm 3.3 W 150 C 320 C -65 to 150 C 0 0 0 NOTES 2/ 2/ 3/ 3/ 2/ 4/ 5/ 6/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the entire MMIC. When operated at this bias condition with a base plate temperature of 70 C, the median life is reduced to 1E+6 hrs. Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 0 5/ 6/ TABLE II DC PROBE TESTS 0 (Ta = 25 C, Nominal) SYMBOL IDSS,Q1 G M,Q1 VBVGS,Q1 VBVGD,Q1 & Q3 VP,Q1-Q6 PARAMETER Saturated Drain Current Transconductance Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Pinch-Off Voltage MIN. 20 44 -30 -30 -1.5 TYP. 57 75 -21 -21 -1 MAX. 94 106 -8 -8 -0.5 UNITS mA mS V V V Q1& Q2 are 200 um FETs, Q3 & Q4 are 240 um FETs, Q5 & Q6 are 400 um FETs Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 2 Advance Product Information November 2, 2004 TGA4042-EPU TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C, Nominal) PARAMETER Frequency Range Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Output Power @ 1 dB Compression Gain, P1dB TYPICAL 41 - 45 6 168 -0.5 14 17 20 18 UNITS GHz V mA V dB dB dB dBm TABLE IV THERMAL INFORMATION PARAMETER TEST CONDITIONS Vd = 6 V ID = 168 mA Pdiss = 1.008 W TCH (OC) RJC (C/W) TM (HRS) RJC Thermal Resistance (channel to backside of carrier) 92.58 22.40 2.7E+8 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 3 Advance Product Information November 2, 2004 TGA4042-EPU Preliminary Measured Data Bias Conditions: Vd = 6 V, Id = 168 mA, Room Temp. 17 16 15 14 13 Gain (dB) 12 11 10 9 8 7 6 5 40 41 42 43 44 45 46 47 Frequency (GHz) 19.0 18.5 18.0 P1dB (dBm) 17.5 17.0 16.5 16.0 42 42.1 42.2 42.3 42.4 42.5 42.6 42.7 42.8 42.9 43 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 4 Advance Product Information November 2, 2004 TGA4042-EPU Preliminary Measured Data Bias Conditions: Vd = 6 V, Id = 168 mA, Room Temp. 0 -5 -10 -15 -20 -25 -30 -35 40 41 42 43 44 45 46 47 Frequency (GHz) Input Return Loss (dB) Output Return Loss (dB) 0 -5 -10 -15 -20 -25 -30 -35 40 41 42 43 44 45 46 47 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 5 Advance Product Information November 2, 2004 TGA4042-EPU Preliminary Measured Data Bias Conditions: Vd = 6 V, Id = 168 mA 16.5 16.0 15.5 15.0 14.5 14.0 0 0C Small Signal Gain (dB) +25 0C +75 0C 13.5 13.0 42.00 42.25 42.50 Frequency (GHz) 42.75 43.00 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 6 Advance Product Information November 2, 2004 TGA4042-EPU Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 7 Advance Product Information November 2, 2004 TGA4042-EPU Chip Assembly Diagram Power Detector Bias Circuit Note: Vcomp sense Rcomp = 100K Icomp A 0.01 uF 0.01 uF Vdet sense 1. With no RF power applied, adjust Rdet until Idet = Icomp (approx 41uA) and record Vdet. 2. Record Vdet as Pout increases. Detector sensitivity at a particular Pout is defined as delta between Vdet at Pout of interest and Vdet with no Pout. Rdet = ~100K A Idet +5V GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 8 Advance Product Information November 2, 2004 TGA4042-EPU Power Detector performance over temperature 220 200 Detector Sensitivity (mV) 180 160 140 120 100 80 60 40 20 0 -15 -12 -9 -6 -3 0 3 6 9 12 15 Pout (dBm) 0C 25C 75C 220 200 Detector Sensitivity (mV) 180 160 140 120 100 80 60 40 20 0 -15 -12 -9 -6 -3 0 3 6 9 12 15 Pout (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 0C 25C 75C TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 9 Advance Product Information November 2, 2004 TGA4042-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. 0 Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 10 |
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